Testing procedure Port Type of testing effect Testing effect’s parameter values Degree of hardness of tests/criterion of quality of operation
GOST R 50648
Resistance to an industrial frequency
magnetic field
  long-term 100 А/м 5/А
short-term 1000 А/м 5/А
GOST R 50649
Resistance to impulse magnetic field
    1000 А/м 5/А
GOST 30804.4.2-2013
Resistance to electrostatic charge
  contact ± 4 кВ 2/А
air ± 8 кВ 3/А
GOST 30804.4.3-2013
Resistance to radio-frequency
electromagnetic field
    10 В/м 3/А
GOST 30804.4.4-2013
Resistance to nanosecond-range
impulse noise
Power supply line   ± 2 кВ 3/А
Analog/discrete I/O   ± 1 кВ 3/А
GOST R 51317.4.5
Resistance to microsecond-range, highenergy
impulse noise
Power supply line wire-wire scheme ± 1 кВ 2/А
wire-ground scheme ± 2 кВ 3/А
Analog/discrete I/O wire-wire scheme ± 1 кВ 3/А
wire-ground scheme ± 2 кВ 3/А
GOST R 51317.4.6
Resistance to conductive interference,
induced by radio frequency
electromagnetic fields in the 0.15–80-
MHz frequency band
Power supply line   10 В 3/А
Analog/discrete I/O   10 В 3/А
GOST R 51317.4.16
Resistance to conductive interference in
the 0–150-kHz frequency band
Power supply line continuous 30 В 4/А
short-term 100 В 4/А
Analog/discrete I/O continuous 30 В 4/А
short-term 100 В 4/А
GOST 30804.4.11-2013
Resistance to sags, short-term
interruptions and voltage changes of
power supply (~ 220V, 50Hz)
Power supply line 20% 0,5 с 2/А
30% 0,5 с 2/А
60% 0,5 с 2/А
100% 0,1 с 2/А
GOST R 51317.4.12
Resistance to solitary and repetitive
oscillating damped interference
Power supply line wire-wire scheme ± 1 кВ 3/А
wire-ground scheme ± 2 кВ 3/А
Analog/discrete I/O wire-wire scheme ± 1 кВ 3/А
wire-ground scheme ± 2 кВ 3/А
GOST R 51317.4.14
Resistance to voltage fluctuations
of power supply
Power supply line   ΔU = ± 0,12 Uном 3/А

 

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